Noise in Charge Amplifiers—A gm/ID Approach

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dc.contributor.authorAlvarez Fontecilla, Enrique
dc.contributor.authorÁvila Gárate, Diego
dc.contributor.authorCampillo Mecklenburg, Hernan
dc.contributor.authorDragone, A.
dc.contributor.authorAbusleme Hoffman, Ángel Christian
dc.date.accessioned2022-05-18T14:39:49Z
dc.date.available2022-05-18T14:39:49Z
dc.date.issued2012
dc.description.abstractCharge amplifiers represent the standard solution to amplify signals from capacitive detectors in high energy physics experiments. In a typical front-end, the noise due to the charge amplifier, and particularly from its input transistor, limits the achievable resolution. The classic approach to attenuate noise effects in MOSFET charge amplifiers is to use the maximum power available, to use a minimum-length input device, and to establish the input transistor width in order to achieve the optimal capacitive matching at the input node. These conclusions, reached by analysis based on simple noise models, lead to sub-optimal results. In this work, a new approach on noise analysis for charge amplifiers based on an extension of the gm/ID methodology is presented. This method combines circuit equations and results from SPICE simulations, both valid for all operation regions and including all noise sources. The method, which allows to find the optimal operation point of the charge amplifier input device for maximum resolution, shows that the minimum device length is not necessarily the optimal, that flicker noise is responsible for the non-monotonic noise versus current function, and provides a deeper insight on the noise limits mechanism from an alternative and more design-oriented point of view.
dc.fuente.origenIEEE
dc.identifier.doi10.1109/TNS.2012.2208270
dc.identifier.issn1558-1578
dc.identifier.urihttps://doi.org/10.1109/TNS.2012.2208270
dc.identifier.urihttps://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6265347
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/64172
dc.information.autorucEscuela de ingeniería ; Alvarez Fontecilla, Enrique ; S/I ; 162171
dc.information.autorucEscuela de ingeniería ; Ávila Gárate, Diego ; S/I ; 170519
dc.information.autorucEscuela de ingeniería ; Campillo Mecklenburg, Hernan ; S/I ; 170556
dc.issue.numero5
dc.language.isoen
dc.nota.accesoContenido parcial
dc.pagina.final2462
dc.pagina.inicio2457
dc.revistaIEEE Transactions on Nuclear Science
dc.rightsacceso restringido
dc.subjectNoise
dc.subjectTransistors
dc.subjectMathematical model
dc.subjectEquations
dc.subjectCapacitance
dc.subjectDetectors
dc.subjectPhysics
dc.titleNoise in Charge Amplifiers—A gm/ID Approaches_ES
dc.typeartículo
dc.volumen59
sipa.codpersvinculados162171
sipa.codpersvinculados170519
sipa.codpersvinculados170556
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