Resistive Switching Behavior seen from the Energy Point of View

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dc.contributor.authorGomez Mir, Jorge Tomás
dc.contributor.authorAbusleme Hoffman, Ángel Christian
dc.contributor.authorVourkas, I.
dc.contributor.authorRubio, A.
dc.date.accessioned2022-05-11T20:26:43Z
dc.date.available2022-05-11T20:26:43Z
dc.date.issued2018
dc.description.abstractThe technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied pulse characteristics, such as amplitude and duration. However, parameter variability holds back any universal approach based on these two magnitudes, making also difficult even the qualitative comparison between different RS material compounds. On the contrary, there is a relevant magnitude which is much less affected by device variability; the energy. In this direction, we doubt anyone so far has ever wondered "what is the quantitative effect of the injected energy on the device state?" Interestingly, a first step was made recently towards the definition of performance parameters for this emerging device technology, using as fundamental parameter the energy. In this work, we further elaborate on such ideas, proving experimentally that the "resistance change per energy unit" (dRidE) can be considered a significant magnitude in analog operation of bipolar memristors, being a key performance parameter worth of timely disclosure.
dc.fuente.origenIEEE
dc.identifier.doi10.1109/IOLTS.2018.8474167
dc.identifier.eisbn978-1-5386-5992-2
dc.identifier.isbn9781538659939
dc.identifier.issn1942-9401
dc.identifier.urihttps://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=8474167
dc.identifier.urihttps://doi.org/10.1109/IOLTS.2018.8474167
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/63838
dc.information.autorucEscuela de ingeniería ; Gomez Mir, Jorge Tomás ; S/I ; 1030571
dc.information.autorucEscuela de ingeniería ; Abusleme Hoffman, Ángel Christian ; S/I ; 2698
dc.language.isoen
dc.nota.accesoContenido parcial
dc.pagina.final150
dc.pagina.inicio147
dc.publisherIEEE
dc.relation.ispartofIEEE International Symposium on On-Line Testing And Robust System Design (IOLTS) (24° : 2018 : Platja d'Aro, España)
dc.rightsacceso restringido
dc.subjectMemristors
dc.subjectResistance
dc.subjectSwitches
dc.subjectPerformance evaluation
dc.subjectComputational modeling
dc.subjectIntegrated circuit modeling
dc.subjectData acquisition
dc.titleResistive Switching Behavior seen from the Energy Point of Viewes_ES
dc.typecomunicación de congreso
sipa.codpersvinculados1030571
sipa.codpersvinculados2698
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