Mismatch of lateral field metal-oxide-metal capacitors in 180 nm CMOS process

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dc.contributor.authorAbusleme, A.
dc.contributor.authorDragone, A.
dc.contributor.authorHaller, G.
dc.contributor.authorMurmann, B.
dc.date.accessioned2024-01-10T12:40:25Z
dc.date.available2024-01-10T12:40:25Z
dc.date.issued2012
dc.description.abstractMetal-oxide-metal (MOM) capacitors represent an attractive alternative to metal-insulator-metal (MIM) capacitors in mixed-signal integrated circuits. Since they are made of metal lines, they can be integrated in standard CMOS processes, and tailored over a wide range of sizes. Mismatch data of MOM capacitors, however, is scarce and typically conservative. Presented is the design and the test results of a custom ADC that employs an array of 1024 MOM capacitors sized at 2 fF. Static performance metrics are presented and compared with those for an ADC based on MIM capacitors. Mismatch data is computed from the results.
dc.description.funderUS Department of Energy (DOE)
dc.description.funderNational Commission for Scientific and Technological Research (CONICYT) of Chile
dc.fechaingreso.objetodigital2024-05-02
dc.format.extent2 páginas
dc.fuente.origenWOS
dc.identifier.doi10.1049/el.2011.3804
dc.identifier.issn0013-5194
dc.identifier.urihttps://doi.org/10.1049/el.2011.3804
dc.identifier.urihttps://repositorio.uc.cl/handle/11534/77308
dc.identifier.wosidWOS:000300881100026
dc.information.autorucIngeniería;Abusleme A ;S/I;2698
dc.issue.numero5
dc.language.isoen
dc.nota.accesocontenido parcial
dc.publisherINST ENGINEERING TECHNOLOGY-IET
dc.revistaELECTRONICS LETTERS
dc.rightsacceso restringido
dc.subject.ods12 Responsible Consumption and Production
dc.subject.odspa12 Producción y consumo responsable
dc.titleMismatch of lateral field metal-oxide-metal capacitors in 180 nm CMOS process
dc.typeartículo
dc.volumen48
sipa.codpersvinculados2698
sipa.indexWOS
sipa.indexScopus
sipa.trazabilidadCarga SIPA;09-01-2024
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