Exploring the voltage divider approach for accurate memristor state tuning
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Date
2017
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
The maximum exploitation of the favorable properties and the analog nature of memristor technology in future nonvolatile resistive memories, requires accurate multi-level programming. In this direction, we explore the voltage divider (VD) approach for highly controllable multi-state SET memristor tuning. We present the theoretical basis of operation, the main advantages and weaknesses. We finally propose an improved closed-loop VD SET scheme to tackle the variability effect and achieve <;1% tuning precision, on average 3x faster than another accurate tuning algorithm of the recent literature.
Description
Keywords
Tuning, Memristors, Switches, Programming, Resistance, Threshold voltage, Simulation