Browsing by Author "Rubio, A."

Now showing 1 - 5 of 5
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    An on-line test strategy and analysis for a 1T1R crossbar memory
    (IEEE, 2017) Escudero-Lopez, M.; Moll, F.; Rubio, A.; Vourkas, Ioannis
    Memristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable applications is in the memory system field. Despite their promising characteristics and the advancements in this emerging technology, variability and reliability are still principal issues for memristors. For these reasons, exploring techniques that check the integrity of circuits is of primary importance. Therefore, this paper proposes a method to perform an on-line test capable to detect a single failure inside the memory crossbar array.
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    Experience on material implication computing with an electromechanical memristor emulator
    (IEEE, 2016) Zuin, S.; Escudero López, M.; Moll, F.; Rubio, A.; Vourkas, Ioannis; Sirakoulis, G. C.
    Memristors are being considered as a promising emerging device able to introduce new paradigms in both data storage and computing. In this paper the authors introduce the concept of a quasi-ideal experimental device that emulates the fundamental behavior of a memristor based on an electromechanical organization. By using this emulator, results about the experimental implementation of an unconventional material implication-based data-path equivalent to the i-4004 are presented and experimentally demonstrated. The use of the proposed quasi-ideal device allows the evaluation of this new computing paradigm, based on the resistance domain, without incorporating the disturbance of process and cycle to cycle variabilities observed in real nowadays devices that cause a limit in yield and behavior.
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    Hematology and serum biochemistry values of Culpeo foxes (Lycalopex culpaeus) from central Chile
    (2014) Rubio, A.; Hidalgo-Hermoso, E.; Bonacic Salas, Cristián
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    Resistive Switching Behavior seen from the Energy Point of View
    (IEEE, 2018) Gomez Mir, Jorge Tomás; Abusleme Hoffman, Ángel Christian; Vourkas, I.; Rubio, A.
    The technology of Resistive Switching (RS) devices (memristors) is continuously maturing on its way towards viable commercial establishment. So far, the change of resistance has been identified as a function of the applied pulse characteristics, such as amplitude and duration. However, parameter variability holds back any universal approach based on these two magnitudes, making also difficult even the qualitative comparison between different RS material compounds. On the contrary, there is a relevant magnitude which is much less affected by device variability; the energy. In this direction, we doubt anyone so far has ever wondered "what is the quantitative effect of the injected energy on the device state?" Interestingly, a first step was made recently towards the definition of performance parameters for this emerging device technology, using as fundamental parameter the energy. In this work, we further elaborate on such ideas, proving experimentally that the "resistance change per energy unit" (dRidE) can be considered a significant magnitude in analog operation of bipolar memristors, being a key performance parameter worth of timely disclosure.
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    Voltage Divider for Self-Limited Analog State Programing of Memristors
    (2020) Gómez Mir, Jorge Tomás; Sdoukou Ioannis, Vourkas; Abusleme Hoffman, Ángel Christian; Sirakoulis, G. C.; Rubio, A.