Towards the generation of spin defects in hBN monolayer by ion implantation

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2023
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The controlled creation of single-photon emitters in two-dimensional materials has gained significant attention due to its potential applications in quantum technologies and optoelectronic devices. Hexagonal boron nitride (hBN) is an insulator with exceptional mechanical and electrical properties. It has emerged as a promising material for next-generation electronic devices. However, the controlled introduction of defects into hBN monolayers remains a challenge. This work aims to address this challenge by utilizing ion implantation as a technique (maximum energy of 5 keV ) to generate defects in hBN monolayers on Si/SiO2. Argon ions were accelerated and directed onto the hBN surface in a high vacuum environment (10−8 mbar), and to characterize the possible defects and their potential as single emitters, we employed confocal microscopy and photoluminescence spectroscopy. The confocal microscopy technique allows for precise spatial mapping of the defects, while the spectroscopy provides insights into their optical properties, such as emission wavelength and intensity. The ion dose has not been successfully characterized but, under certain approximations, it has been estimated of the order of 1015 ions/cm2 . Bright spots were observed in implanted areas with energies between 0.5 keV and 1.0 keV and implantation times of less than 30 s. Due to the low photostability, it was decided to coat the monolayer with PMMA, which in some cases reduced the effects of photobleaching, in addition to observing new behaviors of the bright spots, such as blinking. The measured spectra present two peaks, which would represent the PSB and the ZPL, and are separated by approximately 0.15 eV . According to the literature, they would correspond to carbon defects, which would present a spin of 1/2. To corroborate if the observed are SPEs, it is necessary to measure the autocorrelation function g(2), as well as, if it is desired to analyze if they have a non-zero spin, it will be necessary to perform measurements with ODMR.
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Tesis (Master in Physics)--Pontificia Universidad Católica de Chile, 2023
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