Functional oxide-based electronics for logic, memory, and RF applications
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Date
2021
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Abstract
Moore’s law, which aims to double the number of transistors in the same area
every 18 months, has been in full swing over the last 60 years. Almost every highperformance chip company considered moving to the next available technology node
as a primary way to maximize value, however, with Moore’s law slowing down, it
is necessary to seek different strategies more closely aligned with the needs of each
application. Without the expected device performance boost every 18 months, industries have started to look closely at each step in the production chain providing
many opportunities to improve performance aside from of simply reducing the scale
of transistors. This work explores and optimizes oxide-based emerging devices for
logic, memory, neuromorphic computing and high frequency applications. We performed electrical characterization of several devices and developed high-fidelity, compact circuit-level models. These models bridge the different levels of the supply chain
allowing us to exploit the performance of these novel devices for specific applications.
For instance, for logic applications we modeled, built, and tested doped-Hafnium
Dioxide based ferroelectric field effect transistors (FeFET). We then utilized these
experimentally calibrated compact models to explore the phenomenon of Negative
Capacitance (NC). This phenomenon can be harnessed to provide a boost in logic
transistor performance. We also proposed and experimentally demonstrated the utilization of an amorphous semiconductor oxide channel transistor using a Tungstendoped Indium Oxide transistor. This transistor provides ultra-low leakage and is
back-end-of-line (BEOL) compatible. Using these devices, we modeled, built, and
tested a BEOL compatible embedded DRAM (eDRAM) with ultra-long refresh time.
Description
Tesis (Doctor in Engineering Sciences)--Pontificia Universidad Católica de Chile, 2021